The work demonstrates the achievement of high intensity and stable photoluminescence of InGaN QWs which are the active parts of GaN based semipolar LEDs
Investigation of InxGa1-xN multi-quantum wells for energy efficiency light emitting diode
C Frigeri;
2017
Abstract
The work demonstrates the achievement of high intensity and stable photoluminescence of InGaN QWs which are the active parts of GaN based semipolar LEDsFile in questo prodotto:
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