The beam of planar THz Schottky detectors is strongly concentrated in the dielectric half-space. With the goal of illuminating arrays from the free-space side, we started to investigate substrate removal from both GaAs and Ge-on-Si diode wafers.

Towards Substrate Removal in Quasi-Optical Schottky Detector Arrays

Giovine E;Notargiacomo A;
2011

Abstract

The beam of planar THz Schottky detectors is strongly concentrated in the dielectric half-space. With the goal of illuminating arrays from the free-space side, we started to investigate substrate removal from both GaAs and Ge-on-Si diode wafers.
2011
Inglese
2
shottky
detector
11
info:eu-repo/semantics/article
262
Casini, R; Di Gaspare, A; Giovine, E; Notargiacomo, A; Ortolani, M; Bagni, R; Carta, S; Di Gaspare, L; Capellini, G; Evangelisti, F; Foglietti, V...espandi
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/353828
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