[object Object]The transient enhanced diffusion (TED) during activation annealing of ultra low energy implanted boron (0.5 keV & 1 keV, 1×1013/cm2 & 1×1014/cm2) in silicon is investigated in detail. Annealing in the temperature range from 450°C to 750°C is either performed directly after implantation or after the removal of a surface layer before annealing. The kinetics revealed two regimes of enhanced diffusion ruled by different decay constants and different activation energies. The dependence of these two processes on implantation energy and annealing temperature is described and explained from the microscopical point of view. The annealings performed after surface layer removal, revealed that the defects responsible for the faster diffusion are located deeper than the defects responsible for the slower process.
The source of transient enhanced diffusion in sub-keV implanted boron in crystalline silicon
Privitera V;Mannino G;
2000
Abstract
[object Object]The transient enhanced diffusion (TED) during activation annealing of ultra low energy implanted boron (0.5 keV & 1 keV, 1×1013/cm2 & 1×1014/cm2) in silicon is investigated in detail. Annealing in the temperature range from 450°C to 750°C is either performed directly after implantation or after the removal of a surface layer before annealing. The kinetics revealed two regimes of enhanced diffusion ruled by different decay constants and different activation energies. The dependence of these two processes on implantation energy and annealing temperature is described and explained from the microscopical point of view. The annealings performed after surface layer removal, revealed that the defects responsible for the faster diffusion are located deeper than the defects responsible for the slower process.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
