We report recent advances in understanding of defects and diffusion in silicon. The paper focusses on unifying principles and shows how these pave the way to TCAD as a strategic tool in the development of deep-submicron device technology.
Fundamental diffusion issues for deep-submicron device processing
Mannino G
1999
Abstract
We report recent advances in understanding of defects and diffusion in silicon. The paper focusses on unifying principles and shows how these pave the way to TCAD as a strategic tool in the development of deep-submicron device technology.File in questo prodotto:
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