We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive, fast and maskless process compatible with Si technology. The structure allows for a high light-trapping efficiency across the entire visible range, attaining total reflectance values as low as 0.1% when the wavelength in the medium matches the length scale of maximum heterogeneity in the system. We show that the random fractal structure of our nanowire array is responsible for a strong in-plane multiple scattering, which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence. These strong emissions are correlated on all length scales according to the refractive index fluctuations. The relevance and the perspectives of the reported results are discussed as promising for Si-based photovoltaic and photonic applications.

Strongly enhanced light trapping in a two-dimensional silicon nanowire random fractal array

Fazio Barbara;Iati' Maria Antonia;D'Andrea Cristiano;Lo Faro Maria Jose';Lo Faro Maria Jos;Lo Faro Maria Jos;Gucciardi Pietro Giuseppe;Vasi Cirino Salvatore;Priolo Francesco;Priolo Francesco;Priolo Francesco;Irrera Alessia
2016

Abstract

We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive, fast and maskless process compatible with Si technology. The structure allows for a high light-trapping efficiency across the entire visible range, attaining total reflectance values as low as 0.1% when the wavelength in the medium matches the length scale of maximum heterogeneity in the system. We show that the random fractal structure of our nanowire array is responsible for a strong in-plane multiple scattering, which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence. These strong emissions are correlated on all length scales according to the refractive index fluctuations. The relevance and the perspectives of the reported results are discussed as promising for Si-based photovoltaic and photonic applications.
2016
Istituto di Fisica Applicata - IFAC
Istituto per la Microelettronica e Microsistemi - IMM
Istituto per i Processi Chimico-Fisici - IPCF
light trapping
multiple scattering
Raman enhancement
random fractal
silicon nanowires
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/359176
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