Imaging sensors employing sub-millimeter waves and terahertz radiation (frequencies from 100 to 3000 GHz) are needed for security applications requiring stand-off, non-destructive sensing, due to its much larger penetration depth into dielectric materials. © 2011 Springer Science+Business Media B.V.

Fabrication of planar sub-micron Schottky diodes for terahertz imaging applications

Giovine Ennio;
2011

Abstract

Imaging sensors employing sub-millimeter waves and terahertz radiation (frequencies from 100 to 3000 GHz) are needed for security applications requiring stand-off, non-destructive sensing, due to its much larger penetration depth into dielectric materials. © 2011 Springer Science+Business Media B.V.
2011
Istituto di fotonica e nanotecnologie - IFN
9789400713239
THz imaging
Schottky diodes
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/362129
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