Submicron gate-length metal-semiconductor field effect transistors (mesfets) were fabricated on hydrogen-terminated - large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f=10 ghz and a maximum oscillation frequency, f, up to 35 ghz. These values suggest device microwave operation in the k-band. © 2009 EuMA.
Diamond MESFET technology development for microwave integrated circuits
Giovine E;
2009
Abstract
Submicron gate-length metal-semiconductor field effect transistors (mesfets) were fabricated on hydrogen-terminated - large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f=10 ghz and a maximum oscillation frequency, f, up to 35 ghz. These values suggest device microwave operation in the k-band. © 2009 EuMA.File in questo prodotto:
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