We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e /h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems. © 2009 IEEE NANO Organizers.
Conductance anomalies in quantum point contacts
Notargiacomo A;Giovine E
2009
Abstract
We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e /h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems. © 2009 IEEE NANO Organizers.File in questo prodotto:
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