RF power measurements of submicron Hterminated FETs on polycrystalline diamond up to 2 GHz are reported showing the potential of such substrate for the development of microwave power devices
RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond
Giovine E
2009
Abstract
RF power measurements of submicron Hterminated FETs on polycrystalline diamond up to 2 GHz are reported showing the potential of such substrate for the development of microwave power devicesFile in questo prodotto:
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