Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P =1.5 W/mm) and high frequency (and f=35 GHz) performances have been obtained. © 2009 IEEE.
K-band diamond MESFETs for RFIC technology
Giovine E;
2009
Abstract
Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P =1.5 W/mm) and high frequency (and f=35 GHz) performances have been obtained. © 2009 IEEE.File in questo prodotto:
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