CNR Institutional Research Information System

Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P =1.5 W/mm) and high frequency (and f=35 GHz) performances have been obtained. © 2009 IEEE.

K-band diamond MESFETs for RFIC technology

Giovine E;
2009

Abstract

Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P =1.5 W/mm) and high frequency (and f=35 GHz) performances have been obtained. © 2009 IEEE.
2009
Istituto di fotonica e nanotecnologie - IFN
Inglese
2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009;
355
358
9781424433780
http://www.scopus.com/record/display.url?eid=2-s2.0-70350231660&origin=inward
07-09/06/2009
Diamond
Microwave operation
RF performances
RFICS
Wide band gap semiconductors
2-s2.0-70350231660
1
none
Calvani, P.; Sinisi, F.; Rossi, M. C.; Conte, G.; Giovine, E.; Ciccognani, W.; Limiti, E.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/362171
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? ND
social impact