The investigation of the dynamics of hydrogen diffusion (HD) in GaAs doped with Zn revealed a dissipation peak at 20 K in the kHz range. This relaxation has the highest rate found for H in a semiconductor: more than 15 orders of magnitude higher than in all the other semiconductors measured so far. The analysis of the dissipation curves clearly indicates that the nature of the H reorientation is quantistic.
Quantum diffusion of H(D) in semiconductors and metals, and the role of the interaction with impurities
Cordero F;Giovine E;
1998
Abstract
The investigation of the dynamics of hydrogen diffusion (HD) in GaAs doped with Zn revealed a dissipation peak at 20 K in the kHz range. This relaxation has the highest rate found for H in a semiconductor: more than 15 orders of magnitude higher than in all the other semiconductors measured so far. The analysis of the dissipation curves clearly indicates that the nature of the H reorientation is quantistic.File in questo prodotto:
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