We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22-0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown.
GaN Field Effect Transistors with integrated antennas for THz heterodyne detectors
Di Gaspare Alessandra;Giovine Ennio;
2013
Abstract
We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III-V platform. Spectral response in the 0.22-0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
