We report on the fabrication and quasi-optical responsivity measurements of detectors of free-space terahertz radiation in a broad spectrum (0.18-0.72 THz). The detectors are modified compound-semiconductor heterostructure field-effect-transistors, coupled to integrated planar antennas. © 2013 EurAAP.

Sub-terahertz mixer based on heterostructure field effect transistor with integrated antennas

Di Gaspare Alessandra;Giovine Ennio;
2013

Abstract

We report on the fabrication and quasi-optical responsivity measurements of detectors of free-space terahertz radiation in a broad spectrum (0.18-0.72 THz). The detectors are modified compound-semiconductor heterostructure field-effect-transistors, coupled to integrated planar antennas. © 2013 EurAAP.
2013
Istituto di fotonica e nanotecnologie - IFN
9788890701832
high electron mobility transistor
integrated planar antenna
lens antenna
semiconductor heterostructure
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/363110
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