We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared. © 2011 IEEE.
Fabrication and quantitative comparison of quasi-optical terahertz rectifiers with integrated antennas
Di Gaspare A;Giovine E;
2011
Abstract
We fabricated GaAs air-bridge Schottky diodes and pseudomorphic InGaAs/AlGaAs heterostructure field-effect transistors with similar on-chip lithographic antennas. Detectors were packaged with a silicon lens and their rectified signal when exposed to 450-700 GHz radiation was compared. © 2011 IEEE.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
