In this Letter, we report, to the best of our knowledge, the first demonstration of high-quality integrated microdisk resonators (MDRs) on a 3C-silicon carbide-on-insulator (SiCOI) platform, working over a wide bandwidth from visible to near-infrared wavelengths. We show record-high quality factors for 3C-silicon carbide (SiC) MDRs of 242,000, 112,000, and 83,000 at the wavelengths of 1550 nm, 770 nm, and 650 nm, respectively, based on high-quality 3C-SiC films with the surface roughness as low as 1.4 Å, achieved by sample-transfer bonding, and precise chemical-mechanical polishing of the SiC film, to remove growth defects. Our study of 3C-SiCfilms grownon Siusing transmission electron microscopy shows that even considerably higher-quality single-crystalline SiCOI can be achieved byflipping and thinning downanultra-thick(~ 5-10 ?m) 3C-SiC film grown on Si. The SiCOI platform can be used to realize ultra-wideband high-quality SiC devices that are desirable for applications in nonlinear and quantum photonics.
High-quality integrated microdisk resonators in the visible-to-near-infrared wavelength range on a 3C-silicon carbide-on-insulator platform
Bosi M;
2020
Abstract
In this Letter, we report, to the best of our knowledge, the first demonstration of high-quality integrated microdisk resonators (MDRs) on a 3C-silicon carbide-on-insulator (SiCOI) platform, working over a wide bandwidth from visible to near-infrared wavelengths. We show record-high quality factors for 3C-silicon carbide (SiC) MDRs of 242,000, 112,000, and 83,000 at the wavelengths of 1550 nm, 770 nm, and 650 nm, respectively, based on high-quality 3C-SiC films with the surface roughness as low as 1.4 Å, achieved by sample-transfer bonding, and precise chemical-mechanical polishing of the SiC film, to remove growth defects. Our study of 3C-SiCfilms grownon Siusing transmission electron microscopy shows that even considerably higher-quality single-crystalline SiCOI can be achieved byflipping and thinning downanultra-thick(~ 5-10 ?m) 3C-SiC film grown on Si. The SiCOI platform can be used to realize ultra-wideband high-quality SiC devices that are desirable for applications in nonlinear and quantum photonics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
