The propagation of the Lamb-like modes along an AIN/Si3N4 thin suspended membrane was simulated in order to exploit the zero group velocity (ZGV) resonant conditions, i.e. the frequencies where the mode group velocity vanishes while the phase velocity remains finite. A ZGV micro electroacoustic resonator employing only one interdigital transducer (IDT) and no reflectors was designed that is based on the propagation of the rust quasi symmetric mode qS(1) at frequency of about 1.63 GHz. The device was fabricated directly onto commercially available thin suspended Si3N4 membrane, 200 nm thick, in square silicon supporting frame (200 mu m thick). The Cr/Au interdigital transducer (IDT), with periodicity of 10 mu m, was fabricated by electron beam lithography (EBL) directly onto the Si3N4 membrane; then the piezoelectric AIN layer was grown onto the membrane at room temperature by rf reactive magnetron sputtering technique. The technological feasibility of the ZGV resonator on commercial Si3N4 suspended membrane is demonstrated and preliminary experimental results are shown.

Design and Fabrication of Zero-Group-Velocity Lamb Wave Resonator onto Silicon Nitride/Aluminum Nitride Suspended Membrane

Caliendo Cinzia;Giovine Ennio;
2018

Abstract

The propagation of the Lamb-like modes along an AIN/Si3N4 thin suspended membrane was simulated in order to exploit the zero group velocity (ZGV) resonant conditions, i.e. the frequencies where the mode group velocity vanishes while the phase velocity remains finite. A ZGV micro electroacoustic resonator employing only one interdigital transducer (IDT) and no reflectors was designed that is based on the propagation of the rust quasi symmetric mode qS(1) at frequency of about 1.63 GHz. The device was fabricated directly onto commercially available thin suspended Si3N4 membrane, 200 nm thick, in square silicon supporting frame (200 mu m thick). The Cr/Au interdigital transducer (IDT), with periodicity of 10 mu m, was fabricated by electron beam lithography (EBL) directly onto the Si3N4 membrane; then the piezoelectric AIN layer was grown onto the membrane at room temperature by rf reactive magnetron sputtering technique. The technological feasibility of the ZGV resonator on commercial Si3N4 suspended membrane is demonstrated and preliminary experimental results are shown.
2018
Istituto di fotonica e nanotecnologie - IFN
Inglese
NanoInnovation Conference and Exhibition (NANOINNOVATION)
1990
7
AIP, American institute of physics
Melville, NY
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
6-29/09/2017
Roma
nanofabrication
resonators
zero group velocity
acoustic waves
chic piezoelectric films
2
none
Caliendo, Cinzia; Giovine, Ennio; Hamidullah, Muhammad
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
   Dynamic electromechanical control of semiconductor nanostructures by acoustic fields
   SAWTrain
   H2020
   642688
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/366707
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