Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.
Trilayer electron-beam lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures
Notargiacomo A;Giovine E
2010
Abstract
Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
