The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies. © 2010 IEEE.
AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation
Giovine E;
2010
Abstract
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies. © 2010 IEEE.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
