The beam of planar THz Schottky detectors is strongly concentrated in the dielectric half-space. With the goal of illuminating arrays from the free-space side, we started to investigate substrate removal from both GaAs and Ge-on-Si diode wafers. © 2011 IEEE.
Towards substrate removal in quasi-optical Schottky detector arrays
Di Gaspare A;Giovine E;Notargiacomo A;
2011
Abstract
The beam of planar THz Schottky detectors is strongly concentrated in the dielectric half-space. With the goal of illuminating arrays from the free-space side, we started to investigate substrate removal from both GaAs and Ge-on-Si diode wafers. © 2011 IEEE.File in questo prodotto:
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