We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF6 was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates.
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors
E Giovine;M Pea;
2011
Abstract
We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF6 was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates.File in questo prodotto:
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