Metamorphic InAs/InGaAs QD nanostructures

GaAs-based InAs Quantum Dots (QDs) are vary interesting nanostructures for the generation of infrared light, thanks to their quantum mechanical properties and the possibility of direct integration into mainstream solid-state devices. However, the preparation of QDs emitting in the 1.3 - 1.55 ?m range is challenging, as InAs/GaAs nanostructures emit at 1.0 ?m and adroit design engineering is required to achieve the necessary red shift. I will present our approach to tune the emission of QDs in the telecom range, that is based on the deposition of InAs on InGaAs metamorphic buffers. I will discuss the main features of such nanostructures, giving some perspectives on the engineering possibilities provided by this design, as suggested by modelization results of the quantum system. This will show that InAs/InGaAs metamorphic QDs allow not only to red-shift the emitted light in the 1.3 - 1.55 ?m windows, but also to control other relevant properties of the quantum system.