SERAVALLI, LUCA
SERAVALLI, LUCA
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Edge Engineering in MoS2 by Chemically Induced Nano-Folding
2025 Chini, E.; Esposito, F.; Benekou, V.; Muhyuddin, M.; Lunedei, E.; Ruani, G.; Rizzoli, R.; Calabrese Sivieri, G.; Liscio, F.; Corticelli, F.; Seravalli, L.; D'Angelo, P.; Palermo, V.; Santoro, C.; Candini, A.; Gentili, D.; Cavallini, M.
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors
2025 Panasci, Salvatore Ethan; Schiliro, Emanuela; Greco, Giuseppe; Fiorenza, Patrick; Vivona, Marilena; Di Franco, Salvatore; Roccaforte, Fabrizio; Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Pis, Igor; Bondino, Federica; Pedio, Maddalena; Madonia, Antonino; Cannas, Marco; Agnello, Simonpietro; Seravalli, Luca; Giannazzo, Filippo
Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films
2025 Mattei, F.; Vurro, D.; Spoltore, D.; Pavesi, M.; Rajabi Kalvani, P.; Pasini, S.; Foti, G.; D’Angelo, Pasquale; Bosio, A.; Baraldi, A.; Mezzadri, F.; Mazzolini, P.; Vantaggio, S.; Bosi, M.; Seravalli, L.; Tarabella, G.; Parisini, A.; Fornari, R.
Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates
2025 Hidouri, Tarak; Nasi, Lucia; Ferrari, Claudio; Ferrari, Elena; Bosi, Matteo; Rodriguez, Philippe; Seravalli, Luca; Pedrielli, Andrea; Fornari, Roberto
Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing
2025 Giannazzo, F.; Bondino, F.; Seravalli, L.; Agnello, S.
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption
2024 Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R.
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
2024 Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R.
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics
2024 Golovynskyi, S.; Datsenko, O. I.; Perez-Jimenez, A. I.; Kuklin, A.; Chaigneau, M.; Golovynskyi, A.; Golovynska, I.; Bosi, M.; Seravalli, L.
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors
2024 Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)
2024 Tsai, Y.; Hashimoto, Y.; Sun, Z.; Moriki, T.; Tadamura, T.; Nagata, T.; Mazzolini, P.; Parisini, A.; Bosi, M.; Seravalli, L.; Matsushita, T.; Yamashita, Y.
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films
2024 Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates
2024 Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R,
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study
2023 Zolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R.
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition
2023 Seravalli, Luca; Esposito, Fiorenza; Bosi, Matteo; Aversa, Lucrezia; Trevisi, Giovanna; Verucchi, Roberto; Lazzarini, Laura; Rossi, Francesca; Fabbri, Filippo
Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition
2023 Seravalli, L.; Esposito, F.; Bosi, M.; Aversa, L.; Trevisi, G.; Verucchi, R.; Lazzarini, L.; Rossi, F.; Fabbri, F.
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires
2023 Frigeri, P.; Gombia, E.; Bosi, M.; Trevisi, G.; Seravalli, L.; Ferrari, C.
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
2023 Golovynskyi, S.; Datsenko, O. I.; Usman, M.; Perez-Jimenez, A. I.; Chaigneau, M.; Bosi, M.; Seravalli, L.; Hidouri, T.; Golovynska, I.; Li, B.; Wu, H.
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation)
2023 Parisini, Antonella; Mazzolini, Piero; Bosi, Matteo; Seravalli, Luca; Bosio, Alessio; Fornari, Roberto
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3
2023 Rajabi Kalvani, P.; Parisini, A.; Sozzi, G.; Borelli, C.; Mazzolini, P.; Bierwagen, O.; Vantaggio, S.; Egbo, K.; Bosi, M.; Seravalli, L.; Fornari, R.
Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review
2023 Seravalli, L.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Edge Engineering in MoS2 by Chemically Induced Nano-Folding | 1-gen-2025 | Chini, E.; Esposito, F.; Benekou, V.; Muhyuddin, M.; Lunedei, E.; Ruani, G.; Rizzoli, R.; Calabrese Sivieri, G.; Liscio, F.; Corticelli, F.; Seravalli, L.; D'Angelo, P.; Palermo, V.; Santoro, C.; Candini, A.; Gentili, D.; Cavallini, M. | |
| Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors | 1-gen-2025 | Panasci, Salvatore Ethan; Schiliro, Emanuela; Greco, Giuseppe; Fiorenza, Patrick; Vivona, Marilena; Di Franco, Salvatore; Roccaforte, Fabrizio; Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Pis, Igor; Bondino, Federica; Pedio, Maddalena; Madonia, Antonino; Cannas, Marco; Agnello, Simonpietro; Seravalli, Luca; Giannazzo, Filippo | |
| Planar Hybrid UV-C Photodetectors Based on Aerosol-Jet Printed PEDOT:PSS on Different Ga2O3 Thin Films | 1-gen-2025 | Mattei, F.; Vurro, D.; Spoltore, D.; Pavesi, M.; Rajabi Kalvani, P.; Pasini, S.; Foti, G.; D’Angelo, Pasquale; Bosio, A.; Baraldi, A.; Mezzadri, F.; Mazzolini, P.; Vantaggio, S.; Bosi, M.; Seravalli, L.; Tarabella, G.; Parisini, A.; Fornari, R. | |
| Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates | 1-gen-2025 | Hidouri, Tarak; Nasi, Lucia; Ferrari, Claudio; Ferrari, Elena; Bosi, Matteo; Rodriguez, Philippe; Seravalli, Luca; Pedrielli, Andrea; Fornari, Roberto | |
| Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing | 1-gen-2025 | Giannazzo, F.; Bondino, F.; Seravalli, L.; Agnello, S. | |
| Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption | 1-gen-2024 | Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R. | |
| Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments | 1-gen-2024 | Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R. | |
| Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics | 1-gen-2024 | Golovynskyi, S.; Datsenko, O. I.; Perez-Jimenez, A. I.; Kuklin, A.; Chaigneau, M.; Golovynskyi, A.; Golovynska, I.; Bosi, M.; Seravalli, L. | |
| Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors | 1-gen-2024 | Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca | |
| Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) | 1-gen-2024 | Tsai, Y.; Hashimoto, Y.; Sun, Z.; Moriki, T.; Tadamura, T.; Nagata, T.; Mazzolini, P.; Parisini, A.; Bosi, M.; Seravalli, L.; Matsushita, T.; Yamashita, Y. | |
| Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films | 1-gen-2024 | Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo | |
| Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates | 1-gen-2024 | Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R, | |
| Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study | 1-gen-2023 | Zolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R. | |
| Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition | 1-gen-2023 | Seravalli, Luca; Esposito, Fiorenza; Bosi, Matteo; Aversa, Lucrezia; Trevisi, Giovanna; Verucchi, Roberto; Lazzarini, Laura; Rossi, Francesca; Fabbri, Filippo | |
| Dependence of built-in tensile strain on lateral size of monolayer MoS₂ grown on standard SiO₂/Si substrates by liquid precursor chemical vapor deposition | 1-gen-2023 | Seravalli, L.; Esposito, F.; Bosi, M.; Aversa, L.; Trevisi, G.; Verucchi, R.; Lazzarini, L.; Rossi, F.; Fabbri, F. | |
| Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires | 1-gen-2023 | Frigeri, P.; Gombia, E.; Bosi, M.; Trevisi, G.; Seravalli, L.; Ferrari, C. | |
| Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations | 1-gen-2023 | Golovynskyi, S.; Datsenko, O. I.; Usman, M.; Perez-Jimenez, A. I.; Chaigneau, M.; Bosi, M.; Seravalli, L.; Hidouri, T.; Golovynska, I.; Li, B.; Wu, H. | |
| Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) | 1-gen-2023 | Parisini, Antonella; Mazzolini, Piero; Bosi, Matteo; Seravalli, Luca; Bosio, Alessio; Fornari, Roberto | |
| Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 | 1-gen-2023 | Rajabi Kalvani, P.; Parisini, A.; Sozzi, G.; Borelli, C.; Mazzolini, P.; Bierwagen, O.; Vantaggio, S.; Egbo, K.; Bosi, M.; Seravalli, L.; Fornari, R. | |
| Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review | 1-gen-2023 | Seravalli, L. |