Different spectroscopic techniques have been applied to fluorine doped ZnO powders prepared through hydrothermal synthesis, to discern the effective capability of F atoms to improve ZnO conductivity. From XRD analysis, no lattice distortion was observed up to F doping at 5 at. % concentration. Photoluminescence measurements and electron paramagnetic resonance data show that F atoms tend to occupy oxygen vacancies, inducing the onset of luminescence centers. The resulting doping effect consists into the increment of localized charge, as also proved via THz spectroscopy, where the Drude-Smith model has been applied to extract quantitative information on the electrodynamic parameters of ZnO:F samples. Results show that F doping does not produce any substantial change of plasma frequency but only the enhancement of scattering rate due to an increase of grain boundary density. Our measurements are in agreement with theoretical calculations asserting that the energy required to excite donor levels is on the order of 0.7 eV, and therefore, the doping mechanism is ineffective at room temperature.

Morphological, Structural, and Charge Transfer Properties of F-Doped ZnO: A Spectroscopic Investigation

De Stefano L;Rea I;Andreone A
2017

Abstract

Different spectroscopic techniques have been applied to fluorine doped ZnO powders prepared through hydrothermal synthesis, to discern the effective capability of F atoms to improve ZnO conductivity. From XRD analysis, no lattice distortion was observed up to F doping at 5 at. % concentration. Photoluminescence measurements and electron paramagnetic resonance data show that F atoms tend to occupy oxygen vacancies, inducing the onset of luminescence centers. The resulting doping effect consists into the increment of localized charge, as also proved via THz spectroscopy, where the Drude-Smith model has been applied to extract quantitative information on the electrodynamic parameters of ZnO:F samples. Results show that F doping does not produce any substantial change of plasma frequency but only the enhancement of scattering rate due to an increase of grain boundary density. Our measurements are in agreement with theoretical calculations asserting that the energy required to excite donor levels is on the order of 0.7 eV, and therefore, the doping mechanism is ineffective at room temperature.
2017
Istituto per la Microelettronica e Microsistemi - IMM
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
F-Doped ZnO
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/377089
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