A systematic study of InxGa1-xAs/InyGa1-yAs/GaAs(001) stepped quantum wells with indium composition x = 14.9% and y = 6.4% and thicknesses in the range of quasi-two-dimensional behaviour of Wannier excitons is performed. Optical spectra are compared with model calculations obtained by an accurate exciton envelope function. We point out that optical spectroscopy is a tool for studying indium diffusion in stepped wells, and this property is crucial in order to obtain second harmonic generation enhanced with respect to the bulk value.

Optical properties of stepped InxGa1-xAs/GaAs quantum wells

Ferrari L;Selci S;Bruni MR;Schiumarini D;
1998

Abstract

A systematic study of InxGa1-xAs/InyGa1-yAs/GaAs(001) stepped quantum wells with indium composition x = 14.9% and y = 6.4% and thicknesses in the range of quasi-two-dimensional behaviour of Wannier excitons is performed. Optical spectra are compared with model calculations obtained by an accurate exciton envelope function. We point out that optical spectroscopy is a tool for studying indium diffusion in stepped wells, and this property is crucial in order to obtain second harmonic generation enhanced with respect to the bulk value.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/3799
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