This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a delta sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection
G. Biasiol;D. De Angelis;
2020
Abstract
This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a delta sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.File in questo prodotto:
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Descrizione: his is the Accepted Manuscript version of an article accepted for publication in JINST. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1748-0221/14/01/C01003
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