We report on the realization of Nb-based all-metallic Dayem nano-bridge gate-controlled transistors (Nb-GCTs). These Josephson devices operate up to a temperature of ~ 3 K and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors and leads us to foresee the implementation of a superconducting digital logic based on the Nb-GCT. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable half-wave rectifier to be used for either superconducting electronics or photon detection applications.

Niobium Dayem nano-bridge Josephson gate-controlled transistors

De Simoni G
;
Puglia C;Giazotto F
2020

Abstract

We report on the realization of Nb-based all-metallic Dayem nano-bridge gate-controlled transistors (Nb-GCTs). These Josephson devices operate up to a temperature of ~ 3 K and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors and leads us to foresee the implementation of a superconducting digital logic based on the Nb-GCT. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable half-wave rectifier to be used for either superconducting electronics or photon detection applications.
2020
Istituto Nanoscienze - NANO
Josephson effect, Superconducting devices, Superconductors, Supercurrent, Rectifier, Transconductance, Field effect transistors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/383862
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