This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×10 cm Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10 ?cm.
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
Fedeli P;Puzzanghera M;Moscatelli F;Nipoti R
2017
Abstract
This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×10 cm Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10 ?cm.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
