A detailed model for the reset process kinetics in HfO2-based RRAM is presented describing the transition between low and high resistance states at the atomic level. Based on the filament characteristics as observed by TEM, the kinetics of the reset operation is simulated using the Time Dependent Monte Carlo (TDMC) method incorporating ab-initio calculated microscopic characteristics of the oxygen ions in hafnia. Temperature and field driven oxygen diffusion in the oxide surrounding the filament is shown to provide the needed supply of oxygen to reoxidize the tip of the filament and switch the device to the High Resistance State (HRS).
Microscopic Model for the Kinetics of the Reset Process in HfO2 RRAM
Privitera S;Lombardo S;
2013
Abstract
A detailed model for the reset process kinetics in HfO2-based RRAM is presented describing the transition between low and high resistance states at the atomic level. Based on the filament characteristics as observed by TEM, the kinetics of the reset operation is simulated using the Time Dependent Monte Carlo (TDMC) method incorporating ab-initio calculated microscopic characteristics of the oxygen ions in hafnia. Temperature and field driven oxygen diffusion in the oxide surrounding the filament is shown to provide the needed supply of oxygen to reoxidize the tip of the filament and switch the device to the High Resistance State (HRS).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
