Significant structural changes of the metal stack occurred upon annealing and ohmic contacts were obtained after thermal treatments above 700 degrees C, with specific contact resistance values p(c) similar to 10(-5) Omega cm(2), which depend on the thickness of the Ti layer.
The microstructure and the current transport in Ti/Al/Ni/Au ohmic contacts on AlGaN were investigated in this paper.
Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)
Roccaforte F;
2006
Abstract
The microstructure and the current transport in Ti/Al/Ni/Au ohmic contacts on AlGaN were investigated in this paper.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
