InGaN single quantum wells grown by metal organic vapour phase epitaxy were studied by spectrally resolved cathodoluminescence (CL) and transmission electron microscopy (TEM). Spatial fluctuations of the intensity and peak wavelength at submicrometric scale in the CL emission were observed. The correlation of CL data with structural analysis carried out by TEM shows that such fluctuations are related to threading dislocations that cross the full structure and modify In concentration and thereafter the piezoelectric field and the non-radiative recombination efficiency.
Origin of the fluctuations in the luminescence emission in InGaN quantum wells
Fornari R c;
2006
Abstract
InGaN single quantum wells grown by metal organic vapour phase epitaxy were studied by spectrally resolved cathodoluminescence (CL) and transmission electron microscopy (TEM). Spatial fluctuations of the intensity and peak wavelength at submicrometric scale in the CL emission were observed. The correlation of CL data with structural analysis carried out by TEM shows that such fluctuations are related to threading dislocations that cross the full structure and modify In concentration and thereafter the piezoelectric field and the non-radiative recombination efficiency.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
