The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially developed using chloride and hydride compounds, and later improved by the introduction of new precursors and methodologies such as metal-organic compounds and atomic layer epitaxy. Metalorganic Vapor Phase Epitaxy is based on the principle that metalorganics and hydrides precursors are cracked on a hot substrate where the deposition takes place. These precursors are transported in the growth chamber by a carrier gas (usually hydrogen). In Atomic layer epitaxy, the precursors are introduced alternately into the growth chamber, followed by a cleaning/purge step with a carrier gas. The vapor phase epitaxial growth technique is very complex when it is viewed at the atomic scale.

Vapour Phase Epitaxy

Giovanni Attolini;Matteo Bosi;Marco Negri
2020

Abstract

The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially developed using chloride and hydride compounds, and later improved by the introduction of new precursors and methodologies such as metal-organic compounds and atomic layer epitaxy. Metalorganic Vapor Phase Epitaxy is based on the principle that metalorganics and hydrides precursors are cracked on a hot substrate where the deposition takes place. These precursors are transported in the growth chamber by a carrier gas (usually hydrogen). In Atomic layer epitaxy, the precursors are introduced alternately into the growth chamber, followed by a cleaning/purge step with a carrier gas. The vapor phase epitaxial growth technique is very complex when it is viewed at the atomic scale.
2020
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
9780429022944
VPE, epitaxy, vapour phase
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/408969
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