Solid phase epitaxial growth of ion beam-amorphized Lu-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry. alpha-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500-900 degrees C. Complete epitaxial regrowth has been observed in the Cs irradiated samples, after 875 degrees C annealing in air. On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated alpha-quartz could not be regrown up to 900 degrees C. The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topology. (C) 1998 American Institute of Physics. [S0003-6951(98)01336-9].
Solid phase epitaxial regrowth of ion beam-amorphized alpha-quartz
Roccaforte F;
1998
Abstract
Solid phase epitaxial growth of ion beam-amorphized Lu-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry. alpha-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500-900 degrees C. Complete epitaxial regrowth has been observed in the Cs irradiated samples, after 875 degrees C annealing in air. On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated alpha-quartz could not be regrown up to 900 degrees C. The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topology. (C) 1998 American Institute of Physics. [S0003-6951(98)01336-9].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
