The migration of oxygen in ion-beam-amorphized c-SiO2 (alpha-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction O-18(p,alpha)N-15 for oxygen depth profiling. Only very small amounts of oxygen were observed to diffuse in crystalline or in Xe+-ion beam-amorphized alpha-quartz after high-temperature annealing. However, a dramatic migration of oxygen occurs in Cs+-implanted alpha-quartz in the same temperature range (600-900 degrees C), where Cs diffuses out of the amorphized layer and epitaxial recrystallization occurs. These results point out to a strong correlation of all these processes. A mechanism to explain the observed indiffusion of O-18 is proposed and is related to the Cs migration and the topological modification to achieve epitaxial regrowth of the SiO2 matrix. (C) 2000 American Institute of Physics. [S0003-6951(00)02325-1].
Oxygen migration during epitaxial regrowth in Cs+-irradiated alpha-quartz investigated by means of nuclear reaction analysis
Roccaforte F;
2000
Abstract
The migration of oxygen in ion-beam-amorphized c-SiO2 (alpha-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction O-18(p,alpha)N-15 for oxygen depth profiling. Only very small amounts of oxygen were observed to diffuse in crystalline or in Xe+-ion beam-amorphized alpha-quartz after high-temperature annealing. However, a dramatic migration of oxygen occurs in Cs+-implanted alpha-quartz in the same temperature range (600-900 degrees C), where Cs diffuses out of the amorphized layer and epitaxial recrystallization occurs. These results point out to a strong correlation of all these processes. A mechanism to explain the observed indiffusion of O-18 is proposed and is related to the Cs migration and the topological modification to achieve epitaxial regrowth of the SiO2 matrix. (C) 2000 American Institute of Physics. [S0003-6951(00)02325-1].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
