In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (alpha quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650-875 degreesC. The systematic behavior of alkali ions in enhancing the regrowth rate both with decreasing ion size and increasing concentration is shown. The role of oxygen in the recrystallization was investigated by means of nuclear reaction analysis, by performing thermal treatments of the samples in O-18. A large amount of O-18 diffuses inside the amorphous layer in the alkali-ion implanted samples at 600-800 degreesC. From the strong correlation between the migration of O-18 and implanted alkali, it was possible to gain further insights into the recrystallization mechanism. (C) 2001 American Institute of Physics.
Epitaxial crystallization of keV-ion-bombarded alpha quartz
Roccaforte F;
2001
Abstract
In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (alpha quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650-875 degreesC. The systematic behavior of alkali ions in enhancing the regrowth rate both with decreasing ion size and increasing concentration is shown. The role of oxygen in the recrystallization was investigated by means of nuclear reaction analysis, by performing thermal treatments of the samples in O-18. A large amount of O-18 diffuses inside the amorphous layer in the alkali-ion implanted samples at 600-800 degreesC. From the strong correlation between the migration of O-18 and implanted alkali, it was possible to gain further insights into the recrystallization mechanism. (C) 2001 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
