The presence of traps is sometimes favorable, and sometimes detrimental to the electrical transport and optical efficiency in III-nitride quantum heterostructures. This work presents the results of a joint analysis of electrical features and electroluminescence in InGaN/GaN-based blue light emitting diodes; a detailed and exhaustive reading of the carrier injection mechanisms highlights the central role of trap centers near the active region. Some suggestions will be eventually advanced as to the design of devices with better emission performances.
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes.
Pavesi M;Rossi F;
2008
Abstract
The presence of traps is sometimes favorable, and sometimes detrimental to the electrical transport and optical efficiency in III-nitride quantum heterostructures. This work presents the results of a joint analysis of electrical features and electroluminescence in InGaN/GaN-based blue light emitting diodes; a detailed and exhaustive reading of the carrier injection mechanisms highlights the central role of trap centers near the active region. Some suggestions will be eventually advanced as to the design of devices with better emission performances.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
