Silicon carbide nanowires have been synthesized by carbothermal reduction, from carbon monoxide and single crystal silicon. Transmission electron microscopy and cathodoluminescence studies confirm the growth of a cubic b-SiC core, coated with an amorphous oxide shell. Planar defects, as stacking faults and rotational twins, are present on (111) planes. The formation of short thick rods or long thin wires, depending on the growth temperature and time, is discussed.
Synthesis and characterization of 3C-SiC nanowires
Attolini G;Rossi F;Bosi M;Watts B E;Salviati G
2008
Abstract
Silicon carbide nanowires have been synthesized by carbothermal reduction, from carbon monoxide and single crystal silicon. Transmission electron microscopy and cathodoluminescence studies confirm the growth of a cubic b-SiC core, coated with an amorphous oxide shell. Planar defects, as stacking faults and rotational twins, are present on (111) planes. The formation of short thick rods or long thin wires, depending on the growth temperature and time, is discussed.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
