Al2O3 films with thickness ranging from 20 to 300 nm are grown in a home-made reactor using atomic layer deposition with trimethylaluminum and water on different semiconductor substrates. The deposited films are investigated in terms of composition and electrical properties. Annealing treatments appear necessary in order to obtain films with good insulating properties, although the same treatments do not affect the stoichiometry of the main components.

ALD growth, thermal treatments and characterisation of Al2O3 layers

Pelosi C;Gombia E;
2008

Abstract

Al2O3 films with thickness ranging from 20 to 300 nm are grown in a home-made reactor using atomic layer deposition with trimethylaluminum and water on different semiconductor substrates. The deposited films are investigated in terms of composition and electrical properties. Annealing treatments appear necessary in order to obtain films with good insulating properties, although the same treatments do not affect the stoichiometry of the main components.
2008
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
77.55.+f, 77.22.-d
Al2O3
High K dielectric
C-V measurements
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/41052
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