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PELOSI, CLAUDIO

PELOSI, CLAUDIO  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 107 (tempo di esecuzione: 0.093 secondi).
Titolo Data di pubblicazione Autore(i) File
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 1-gen-2006 Pelosi C.; Attolini G.; Bosi M.; Moscatelli D.; Veneroni A.; Masi M.
ALD growth, thermal treatments and characterisation of Al2O3 layers 1-gen-2008 Ghiraldelli, E; Pelosi, C; Gombia, E; Chiavarotti, G; Vanzetti, L
ALD mechanisms in the growth of amorphous Al2O3 onto different substrates 1-gen-2007 Ghilardelli E.; Pelosi C.; Frigeri C.; Chiavarotti G.
Analysis of temperature behavior of polarized photoluminescence in ordered GaInP layer 1-gen-2009 Prutskij, T; Pelosi, C; Britoorta, R
Aspetti generali della crescita epitassiale MOCVD 1-gen-2003 Regonini, D; Attolini, G; Pelosi, C; Watts, B E; Melioli, E; Leccabue, ; F,
Assessment of NSOM resolution on III-V semiconductor thin films 1-gen-1998 Labardi, M; Gucciardi, P G; Allegrini, M; Pelosi, C
AVANCES EN EL ESTUDIO DE CELDAS SOLARES BASADAS EN MATERIALES III-V 1-gen-2007 Plá J.; Barrera M.; Rubinelli F.; García J.; Socolovsky H.; Bosi M.; Attolini G.; Pelosi C.
Celle solari: rassegna teorica e applicativa 1-gen-2005 M.Bosi ; J. Plà ; G. Attolini ; M. Calicchio ; C. Pelosi M.Bosi ; J. Plà; G. Attolini ; M. Calicchio ; C. Pelosi
Characterisation of GaAsN layers grown by MOVPE 1-gen-2006 Pelosi, C; Attolini, G; Bosi, M; Avella, M; Calicchio, M; Musayeva, N; Jimenez, J
Characterisation of GaAsN layers grown by MOVPE 1-gen-2006 Pelosi, C; Attolini, G; Bosi, M; Avella, M; Calicchio, C; Musayeva, N
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari, C; Bosi, M; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari C.; Bosi M.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N.
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari, C; Bosi, M; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate 1-gen-2006 Navamathavan R.; Ganesan V.; Arivuoli D.; Attolini G.; Pelosi C.; Choi C. K.
Colaboración italo-argentina para el estudio de celdas solares basadas en materiales III-V 1-gen-2006 Plá, J; Barrera, M; Bosi, M; Pelosi, C; Attolini, G; Rubinelli, F; Fortin, F; Martínez Bogado, Mg
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 1-gen-2007 Frigeri, C; Pelosi, C; Germini, F; Attolini, G; Bosi, M
Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques 1-gen-2005 Prutskij T.; Pelosi C.; BritoOrta R.A.
Composition determination of the interlayer at the inverted interfaces in InGaP/GaAs heterojunctions 1-gen-2008 Frigeri, C; Attolini, G; Bosi, M; Pelosi, C; Germini, F
Crescita epitassiale di carburo di silicio 1-gen-2003 Regonini D.; Pelosi C.; Watts B. E.; Leccabue; F.
CRYSTAL-GROWTH, THERMODYNAMICAL AND STRUCTURAL STUDY OF COGA2O4 AND ZNCR2O4 SINGLE-CRYSTALS 1-gen-1986 LECCABUE, F; PELOSI, C; AGOSTINELLI, E; FARES, V; FIORANI, D; PAPARAZZO, E