The quality of a CdZnTe-based X-ray detector is highly related to the interface between semiconductor and metal contact. One of the factors that increase leakage currents in CdZnTe based X-Ray detectors is the presence of a conductive surface layer. In this paper the result of the passivation of the CdZnTe surface by means of an aqueous solution of NH4F/H2O2 is studied by optical ellipsometry and by the current-voltage characteristics of gold contacts deposited on the oxidized surface. Collected data show that leakage currents can be reduced and contact stability improved by the combined use of the passivation layer and a guard ring.

Study of Surface Treatment Effects on the Metal-CdZnTe Interface

Zappettini A;Gombia E;Mosca R;Pavesi M
2009

Abstract

The quality of a CdZnTe-based X-ray detector is highly related to the interface between semiconductor and metal contact. One of the factors that increase leakage currents in CdZnTe based X-Ray detectors is the presence of a conductive surface layer. In this paper the result of the passivation of the CdZnTe surface by means of an aqueous solution of NH4F/H2O2 is studied by optical ellipsometry and by the current-voltage characteristics of gold contacts deposited on the oxidized surface. Collected data show that leakage currents can be reduced and contact stability improved by the combined use of the passivation layer and a guard ring.
2009
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Gamma-ray detectors
Cadmium zinc telluride
Contact resistance
Etching
Oxidation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/41112
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