MOCVD fabrication of ferroelectric SrBi2Ta2O9 (SBT) films using Sr(hfac)(2)center dot tetraglyme, Bi(C6H5)(3), and Ta(OC2H5)(5) precursors is reported. The SBT phase has been reproducibly obtained adopting a two-step procedure, namely, the deposition of a fluorine-containing Sr-Bi-Ta-O(F) matrix followed by the annealing step at 800 degrees C. The multicomponent deposition process was optimized by tuning the overall process to individual kinetics associated with each singled-out precursor, to film morphologies and microstructures, and finally to film properties. Particular attention has also been focused on the annealing process of the deposited Sr-Bi-Ta-O(F) matrix aimed at an efficient crystallization step of the SBT phase as well as on an efficient elimination of fluorine phases associated with decomposition of the fluorinated Sr precursors.
Metal-organic chemical vapor deposition of ferroelectric SrBi2Ta2O9 films from a fluorine-containing precursor system
Lo Nigro R;
2006
Abstract
MOCVD fabrication of ferroelectric SrBi2Ta2O9 (SBT) films using Sr(hfac)(2)center dot tetraglyme, Bi(C6H5)(3), and Ta(OC2H5)(5) precursors is reported. The SBT phase has been reproducibly obtained adopting a two-step procedure, namely, the deposition of a fluorine-containing Sr-Bi-Ta-O(F) matrix followed by the annealing step at 800 degrees C. The multicomponent deposition process was optimized by tuning the overall process to individual kinetics associated with each singled-out precursor, to film morphologies and microstructures, and finally to film properties. Particular attention has also been focused on the annealing process of the deposited Sr-Bi-Ta-O(F) matrix aimed at an efficient crystallization step of the SBT phase as well as on an efficient elimination of fluorine phases associated with decomposition of the fluorinated Sr precursors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
