In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.
Experimental evaluation of oxide current on a low voltage trench gate power mos under mechanical bending conditions
Sciuto Antonella;D'Arrigo Giuseppe
2020
Abstract
In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.File in questo prodotto:
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