The effect of a 1500 degrees C treatment on 1x10(20) cm(-3) Al+ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 degrees C is studied in this work. Up to 240 min annealing time at 1500 degrees C, the Al electrical activation reached at 1850-1950 degrees C is preserved.
Thermal stability of 1x10(20) cm(-3) Al+ implanted 4H-SiC after electrical activation at temperature >= 1850 degrees C
Nipoti R;Puzzanghera M;
2017
Abstract
The effect of a 1500 degrees C treatment on 1x10(20) cm(-3) Al+ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 degrees C is studied in this work. Up to 240 min annealing time at 1500 degrees C, the Al electrical activation reached at 1850-1950 degrees C is preserved.File in questo prodotto:
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