A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30 degrees C up to 300 degrees C, has been used for thermal sensing. A high sensitivity of 5.13 mV/degrees C at two constant bias currents has been measured.
Temperature sensor based on 4H-SiC diodes for hostile environments Temperature measurement up to T=300 degrees C
Nipoti R
2015
Abstract
A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30 degrees C up to 300 degrees C, has been used for thermal sensing. A high sensitivity of 5.13 mV/degrees C at two constant bias currents has been measured.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
