An active two dimensional near field imaging of a High Electron Mobility Transistor (HEMT) used as THz detector has been performed. The reflective imaging system developed at the ENEA FEL Facility in Frascati has been used to this purpose. This imaging technique has shown to be particularly powerful in resolving various coupling mechanisms of the incident radiation with the device.
Active electric near field imaging of electronic devices
V Foglietti;E Giovine;F Evangelisti
2008
Abstract
An active two dimensional near field imaging of a High Electron Mobility Transistor (HEMT) used as THz detector has been performed. The reflective imaging system developed at the ENEA FEL Facility in Frascati has been used to this purpose. This imaging technique has shown to be particularly powerful in resolving various coupling mechanisms of the incident radiation with the device.File in questo prodotto:
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