The enhancement of excitonic emission crossing Saha equilibrium in trap passivated CH3NH3PbBr3 perovskite

The interdependence of free carries, trap states and excitons in the light emission properties of CH3NH3PbBr3 perovskite thin films and their relationship to device performance is a subject of debate. Here, the authors investigate the role of non-radiative recombination and demonstrate that the photoluminescence is dominated by exciton radiative decay processes.

Metal-halide semiconductor perovskites have received great attention for the development of stable and efficient light emitting diodes and lasers, since they combine high charge carrier mobility and light emission spectral-purity with low-cost fabrication methods. Nevertheless, the role of excitons, free carries and trap states in perovskite light emission properties is still unclear due to their interdependence. In this paper we selectively manage trapping and light emission mechanisms by a reversible laser-assisted trap-passivation process performed on a CH3NH3PbBr3 perovskite layer, coupled to the inner modes of a high-quality micro-cavity, which only affects the radiative recombination. We show that photoluminescence is dominated by exciton radiative decay process and that trap states passivation increases the exciton gemination rate by reducing coulombic scattering of free electrons due to the ionized impurities. This picture provides a more general description than the model based on trap states-free Saha thermodynamic equilibrium between photo-generated species.