The Sn-InSb interface and ?-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality ?-Sn(111)-(1×1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates.
?-Sn pseudomorphic growth on InSb (111) and (111) surfaces: A high-resolution photoemission study
Magnano E;
2000
Abstract
The Sn-InSb interface and ?-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality ?-Sn(111)-(1×1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates.File in questo prodotto:
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