P-type 4H-SiC layers have been obtained by different 400°C Al ion implantation processes of semi insulating 4H-SiC wafers and identical 1950°C/5 min post implantation annealing. Implanted Al concentration have been 4.7×10, 9.3×10, and 4.7×10 cm, thickness of the implanted layer about 630 nm. Electrical characterizations have been performed in the temperature range 100 - 580 K. With decreasing temperature, the onset of a hole conduction through an impurity band has been seen for all the specimens.
Al+ ion implanted on-axis <0001>semi-insulating 4H-SiC
Nipoti Roberta;Albonetti Cristiano;
2015
Abstract
P-type 4H-SiC layers have been obtained by different 400°C Al ion implantation processes of semi insulating 4H-SiC wafers and identical 1950°C/5 min post implantation annealing. Implanted Al concentration have been 4.7×10, 9.3×10, and 4.7×10 cm, thickness of the implanted layer about 630 nm. Electrical characterizations have been performed in the temperature range 100 - 580 K. With decreasing temperature, the onset of a hole conduction through an impurity band has been seen for all the specimens.File in questo prodotto:
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