Forward J-V curves of 4H-SiC p-i-n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing-point. The interlacing behaviour occurring in the J-V curves of 4H-SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing-point behaviour. Comparisons with experimental data confirm the analytic and simulated results.
Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p+-i-n diodes
Nipoti R
2015
Abstract
Forward J-V curves of 4H-SiC p-i-n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing-point. The interlacing behaviour occurring in the J-V curves of 4H-SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing-point behaviour. Comparisons with experimental data confirm the analytic and simulated results.File in questo prodotto:
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