This study shows that, after annealing at 1950°C, a 1×1020 cm Al implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.
1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time
Nipoti Roberta;Centurioni Emanuele;
2016
Abstract
This study shows that, after annealing at 1950°C, a 1×1020 cm Al implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.File in questo prodotto:
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